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PolarHV TM HiPerFET
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFN 60N80P
V DSS = 800 V
I D25 = 53 A
R DS(on) ≤ 140 m ?
t rr ≤ 250 ns
Symbol
Test Conditions
Maximum Ratings
miniBLOC, SOT-227 B (IXFN)
V DSS
V DGR
V GSS
V GSM
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C; R GS = 1 M ?
Continuous
Transient
800
800
± 30
± 40
V
V
V
V
E153432
G
S
I D25
I DM
T C = 25 ° C
T C = 25 ° C, pulse width limited by T JM
53
250
A
A
D
S
I AR
T C = 25 ° C
30
A
G = Gate
D = Drain
E AR
E AS
dv/dt
T C = 25 ° C
T C = 25 ° C
I S ≤ I DM , di/dt ≤ 100 A/ μ s, V DD ≤ V DSS ,
100
5
20
mJ
J
V/ns
S = Source
Either Source terminal S can be used as the
Source terminal or the Kelvin Source (gate
return) terminal.
T J ≤ 150 ° C, R G = 2 ?
P D
T C = 25 ° C
1040
W
T J
T JM
T stg
T L
V ISOL
1.6 mm (0.062 in.) from case for 10 s
50/60 Hz, RMS t = 1 min
I ISOL ≤ 1 mA t = 1 s
-55 ... +150
150
-55 ... +150
300
2500
3000
° C
° C
° C
° C
V~
V~
Features
? International standard package
? Encapsulating epoxy meets
UL 94 V-0, flammability classification
? miniBLOC with Aluminium nitride
isolation
M d
Mounting torque
Terminal connection torque
1.5 / 13 Nm/lb.in.
1.5 / 13 Nm/lb.in.
l
l
Fast recovery diode
Unclamped Inductive Switching (UIS)
Weight
30
g
l
rated
Low package inductance
- easy to drive and to protect
Easy to mount
Space savings
Symbol          Test Conditions
(T J = 25 ° C, unless otherwise specified)
BV DSS V GS = 0 V, I D = 3 mA
Characteristic Values
Min. Typ. Max.
800 V
Advantages
l
l
V GS(th)
V DS = V GS , I D = 8 mA
3.0
5.0
V
l
High power density
I GSS
V GS = ± 30 V DC , V DS = 0
± 200
nA
I DSS
R DS(on)
V DS = V DSS
V GS = 0 V
V GS = 10 V, I D = I T , Note 1
T J = 125 ° C
25
3000
140
μ A
μ A
m ?
? 2006 IXYS All rights reserved
DS99562E(02/06)
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